The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
With increasing scale and complexity in pHEMT circuit and dimension shrinking in unit pHEMT devices, distributed effects are becoming more crucial than ever. During design of amplifiers, precise prediction of the resistances of a device is vital to simulation result due to the direct impact on impedance. This work reports a set of experiments utilizing different testing structures to reveal how a...
With increasing scale/complexity in phemt switch circuits and dimension shrinking of unit phemt switch devices, distributed effects are becoming crucial on insertion loss and harmonics, especially the second harmonic. Distributed effects of metal resistances and inductances are taken into account in this paper. It is shown that distributed effects, either along the drain/source fingers or along the...
A physics-based analytic model with no fitting parameters is introduced for the AlGaN/GaN HFET. For unsaturated operation, non-linear analytic models for the I-V characteristics in the two access regions and beneath the gate are developed. The resulting equations are linked together by voltage and current continuity at the boundaries. Good agreement between the model and corresponding simulations...
A physics-based analytic model is built based on the discovery of a new zone in AlGaN/GaN HFETs that is observed in 2D device simulations, especially at high drain bias. The zone is located in the drain access region and is named the "charge deficit zone" after its particular property of a partially filled quantum well. This zone plays an important role when the HFET is under high drain...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.