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A long-wavelength GaInNAs vertical-cavity surface-emitting laser with a buried tunnel junction (BTJ) has been demonstrated in this paper. It has been shown that a combination of a GaAs-based BTJ for a current confinement, GaInNAs multi-quantum wells for an active region, a dielectric distributed Bragg reflector (DBR) for a top mirror, and an AlGaAs/GaAs DBR for a bottom mirror is desirable to realize...
10 Gbps operation of BTJ GaInNAs VCSELs is achieved over temperature range of 25degC to 100degC with operation current of 5.6 mA and extinction ratio of 4.2 dB.
GaInNAs-VCSELs with buried tunnel junction structures are proposed and demonstrated. The maximum output powers of 4.2 mW at 25degC and 2.2 mW at 85degC are achieved with a low resistance of 65 Omega.
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