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An MOCVD-grown InP/InGaAs double-heterojunction bipolar transistor with a step-graded InGaAsP collector is described. This transistor allows high injection current densities over 2.9*10/sup 5/ A/cm/sup 2/, which suggests no significant current blocking related to the wide-gap InP layers. A cutoff frequency of 155 GHz and a maximum oscillation frequency of 90 GHz are obtained at the collector current...
Extremely small-emitter InP/InGaAs heterojunction bipolar transistors have been fabricated by using a selfalignment technique on MOCVD-grown material. Fabricated devices with a 1*2 mu m/sup 2/ emitter electrode showed f/sub T/ exceeding 100 GHz at submilliampere collector currents of I/sub C/>0.6 mA. A maximum f/sub T/ of 163 GHz at I/sub C/=2.3 mA ranks with the f/sub T/=176 GHz achieved by a...
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