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The inductively coupled plasma-reactive ion etching (ICP-RIE) of SiC single crystals using the C2F6/O2 gas mixture was investigated. It was observed that the etch rate increased as the ICP power and bias power increased. With increasing sample-coil distance, O2 concentration, and chamber pressure, the etch rate initially increased, reached a maximum, and then decreased. Mesas with smooth surfaces...
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