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We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon inter-mode scattering. The results allow to interpret recent experimental results of resonant THz detection by InGaAs nanotransistors. The...
We observed intensive room temperature broadband terahertz emission from two-dimensional plasmons in dual grating-gate high electron-mobility transistors. Experiments were performed using infrared spectroscopy with a silicon bolometer. Simulation reveals the thermal excitation of the plasmons.
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