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The ultra-low leakage properties of a novel InGaAs/InAlAs/InP structure have been used to fabricate large gate periphery pHEMTs (up to 1200μm 2 ) required for wide band low-noise amplifiers (LNA). The devices were characterized and both linear and non-linear models were extracted. LNAs were then designed and compared favourably with the best results reported to date between 0.3 and 2GHz, still...
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