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GaAs Gunn diodes optimized for use in second harmonic mode at 125GHz have been fabricated with hot electron injection based on a novel step-graded AlxGa(1−x)As launcher. Testing was performed after encapsulation in rugged, hermetically sealed packages using a similar process to that performed for volume manufacture of devices for the automotive industry. RF power levels up to 40mW at 121.5GHz in second...
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