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We report high output power from AlInGaN multiple quantum well (MQW) ultraviolet light-emitting diodes. The high Al containing cladding layer, electron blocking layer and p-contact layer were chosen for transparency at 365nm to reduce the internal absorption, reduce electron overflow and enhance output power. The UV output power was as high as 1.52mW at 20mA at 368nm under room temperature CW operation...
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