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In modern communication system, both the bandwidth and peak-to-average power ratio of the transmitted signal are increasing rapidly. As a result, the power amplifiers based on linear power amplifiers such as class A, B or AB suffer from very low efficiency. The most promising solutions are the Envelope Tracking (ET) and Envelope Elimination and Restoration (EER) techniques, which can greatly improve...
In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry, Al mole fraction, type of the field plate, etc) and on-resistance together with parasitic capacitances of the device. In this way, it is possible to optimize the design of a switching device for a particular...
In this paper, application of new technological solution for power switches based on Gallium Nitride (GaN) in Envelope Amplifier for Radio Frequency Power Amplifier is proposed. The goal of this application is the efficiency enhancement at high switching frequency, due to superior conductivity and switching characteristics of enhancement mode GaN FETs over Si devices. Experimental results provided...
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