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Semiconductor disk lasers (SDLs) operating around 1.55 mum have been the subject of increasing interest. The performance of monolithically grown SDLs in this wavelength range suffers, however, from the poor quality of the InP-based distributed Bragg reflector (DBR). Recently, wafer fusion technique was applied to a long- wavelength SDL to avoid this obstacle. An active region grown on InP substrate...
A novel approach based on a wafer fused optically-pumped semiconductor disk laser (SDL) operating at 1.2 mum is reported. The technique allows integrating materials with different lattice constants and provides convenient means to extend the operation wavelength of an SDL. This work demonstrates the first wafer fused optically-pumped semiconductor disk laser operating at the 1.2 m wavelength regime...
A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InPAlGaAs/GaAs half cavity shows a high CW output of 2.28 W at room temperature and 250 mW at 75degC.
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