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An erbium-doped fibre ring has been actively modelocked with an InGaAsP semiconductor amplifier employed as a modulator. Pulses having durations <4ps and peak powers of approximately 2 W around 1536 nm have been generated at a repetition frequency of 612 MHz by this new technique of controlled-amplifier modelocking (CAM).<<ETX>>
Amplification of picosecond pulses from an actively mode-locked semiconductor diode laser in an erbium-doped fibre amplifier pumped at 532 nm is demonstrated. Peak emission was centred on 1.536 mu m and a saturated amplifier gain of 13 dB yielded less than 10 ps pulses with a peak power of 0.58 W at 600 MHz. Optimisation of the mode-locked oscillator allowed amplified peak pulse powers greater than...
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