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Quantum dot based light emitters can be used as laser and single photon devices. In particular, we focus on the theory of InAs/GaAs quantum dots (QDs) embedded in a two dimensional wetting layer (WL). For simulating real devices, the interactions between electrons and holes confined in the QDs and the wetting layer are important. Therefore, we include Coulomb interaction as well as electron-phonon...
We discuss the impact of a 2D-charged carrier reservoir for high-speed optical amplification and modulated lasing in quantum dot (QD)-based devices by testing the amplification of short trains of high power, femtosecond optical pulses in an InGaAs QD-in-a-well-based semiconductor optical amplifier (SOA). We adapt a laser-like rate equation model to describe heterodyne pump-and-probe experiments. After...
The ultrafast population and polarisation dynamics in electrically pumped InGaAs QDs is studied experimentally and theoretically. Limits for ultrafast pulse train amplification with THz repetition rates at high, electrically-injected, non-equilibrium carrier densities are discussed.
We measure the exciton coherence time in InGaAs quantum dots by four-wave mixing. At low temperature, this time is only given by the radiative lifetime which we tune by annealing the dots
The exciton dephasing time from 5 K to 60 K is measured in InAs/GaAs quantum-dot molecules using a highly sensitive four-wave mixing technique and shows a systematic dependence from the interdot barrier thicknesses
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