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Angular and spectral reflectivities of GaN nano-pillar structures are investigated for heights of 350nm, 550nm and 720 nm. Calculations based on rigorous coupled-wave analysis show excellent agreement with the measured reflectivities for s- and p-polarizations.
InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.
Angular and spectral reflectivities of GaN nano-pillar structures are investigated for heights of 350 nm, 550 nm and 720 nm. Calculations based on rigorous coupled-wave analysis show excellent agreement with the measured reflectivities for s- and p-polarizations.
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