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We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 μ m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at VGS = 0 V, a measured transconductance gM = 480 mS/mm, and a peak current gain cutoff frequency fT = 121 GHz with a simultaneous maximum oscillation frequency fMAX = 142 GHz. At 10 (20) GHz, our HEMTs...
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