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We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported (IdM=0.19nA), a responsivity of 0.9A/W (at M=1), a very low noise (F(M=10)=3.3), and a high gainxbandwidth (150GHz).
We demonstrate a planar junction AlInAs APD using Carbon as p-doping impurity of the charge layer allowing to achieve simultaneously a high primary sensitivity of 0.9 A/W, a low dark current (Idark(M=10)=17 nA at ambient temperature), a low excess noise factor (f(M=10)=3.5) and high gaintimesbandwidth product over 140 GHz.
We demonstrate a back-illuminated planar AllnAs APD. We obtain a low excess noise factor of 4 at M=10 measured with an accurate noise characterization method and a high bandwidth over 10 GHz (M=1.5 to 7).
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