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This letter presents a comparative study of GaInAs-AlInAs avalanche photodiodes with different absorption layer thicknesses. Simulations concerning dark current and frequency response have been carried out to study the influence of the vertical structure on functional characteristics. Fabricated devices achieved gain-bandwidth product GtimesB as high as 180 GHz combined with very low dark current...
We report experimental characterization results for Near Infrared planar photodiodes with a potential cut-off wavelength higher than 1900 nm. The active layer is made up of three compressively strained InGaAs quantum wells. This photodiode is to be finally integrated in a MOEMS tunable resonant cavity for the realization of a low cost microspectrometer intended to agro-food applications.
We demonstrate a planar junction AlInAs APD using Carbon as p-doping impurity of the charge layer allowing to achieve simultaneously a high primary sensitivity of 0.9 A/W, a low dark current (Idark(M=10)=17 nA at ambient temperature), a low excess noise factor (f(M=10)=3.5) and high gaintimesbandwidth product over 140 GHz.
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