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We numerically and experimentally investigated the electromagnetic properties of split ring resonator arrays excited under normal and oblique incidence angles and aimed at operating from the microwave to the infrared spectral region. Through fullwave EM analysis, the electromagnetic response is demonstrated in the metamaterial regime (inclusion rather than periodicity effect) responsible for high...
The fabrication of an airbridged low parasitic resonant tunnelling diode is described. The devices were fabricated from strained In/sub 0.1/Ga/sub 0.9/As/GaAs/AlAs layers. They yielded excellent DC characteristics with simultaneously high peak-to-valley current ratios of 7:1 and peak current of 50 kA/cm/sup 2/ at 300 K. RF measurements up to 40 GHz showed that the total parasitic capacitance was 0...
Pseudomorphic Inx, Ga1-x As/GaAs/AlAs resonant tunneling diodes have been fabricated in a microwave compatible technology and tested. The epilayers were designed in a triple well configuration in order to improve the electrical performances of diodes used as harmonic multipliers. The devices exhibited excellent DC characteristics with peak-to-valley current ratios as high as 7:1 along with peak current...
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