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The energy distributions of traps which cause RTS noise using the array test pattern having a large number of n-MOS and p-MOS are investigated. The more traps which cause RTS noise located near the conduction band. The phenomena in p-MOS are almost the same as n-MOS. However, the number of traps in p-MOS is less than that in n-MOS. The tendency of the energy distribution of the traps near the conduction...
We investigate statistical behaviors of steady-state p-n junction leakage currents at source/drain of MOSFET devices (Ileaks) and dynamic fluctuations of Ileaks using a newly developed test circuit. The test circuit can acquire the leakage currents from 28,672 n+-p diodes in 7.7 s with 10 times averaging with the range from 0.1 fA to 23 fA. We demonstrate that two normal distributions exist in the...
In this work, we investigated random telegraph signal (RTS) amplitude and the probability of trap empty along two different drain current directions for various gate lengths using novel test structures which enable to measure RTS in large numbers. Asymmetry of RTS amplitude along source-drain current direction increases as gate length shortens because a trap near the gate edge dominates RTS phenomenon...
We have proposed and developed a test structure for evaluating electrical characteristics variability of a large number of MOSFETs in very short time using very simple circuit structure. The electrical characteristics such as threshold voltage, subthreshold swings S-factors, random telegraph signal noise, and so on, can be measured in over one million MOSFETs. This new test structure circuit and results...
To suppress Random Telegraph Signal (RTS) noise in MOSFETs, it is necessary to understand the phenomena of RTS. We can extract the accurate time constant in RTS noise by measuring a huge number of MOSFETs during a long time. Time constant is useful to obtain the energy level. In this paper, we demonstrated the statistical and accurate measurement method of the time constant of RTS by a sufficient...
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