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High performance 32 nm-node interconnect with ELK (Extremely Low-k, k=3D2.4) has been demonstrated. To suppress process damage and enlarge the via-line space with a wide lithography process margin, robust ELK film with a metal hard mask (MHM) self-aligned via process has been developed. It has accomplished both ultimate low capacitance wirings and high TDDB reliability between Cu lines with vias....
We demonstrate the first ever 0.9μm pitch pixel CMOS image sensor (CIS), and reveal the problems that are likely to be encountered in future device structures. We have developed a set of guidelines for the design of high quantum efficiency(QE) CISs, and verified their validity by comparing the image quality of 0.9, 1.12, 1.4 and 1.75μm CISs. Furthermore, we propose a simple methodology to optimize...
Resist planarization is applied to trench first dual damascene process in order to enhance focus margin for via lithography after hard mask etch. As a planarization process, resist CMP is better than conventional resist etch back, However, hard mask (HM) erosion by resist CMP causes serious problem of lessened thickness of Cu. To solve it, the combination of CMP and etch back (C+E) is adopted. This...
RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by heat treatment. It was also shown that RuTa(N) has inferior reliability due to its poor wettability with...
The recent paper is devoted to design, manufacturing and testing the permanent magnet system to be used for Positron Emission Tomography (PET) cyclotron. The using permanent magnet material instead of copper coils allows essential electric power savings during PET cyclotron operation, though it comes to some increasing construction cost. The main problem why until now permanent magnets were not used...
Dual damascene Cu interconnects with Keff below 2.0 have been demonstrated for the first time. Air gaps between Cu lines were formed with a low K SiOC film in a carefully designed manner. CoWP cap layers were introduced to protect the Cu lines and to eliminate a dielectric liner layer. In addition, AGE (Air Gap Exclusion) was applied to solve crucial problems related to the air gaps. Keff of 1.9 was...
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