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Cubic boron nitride (cBN) films were deposited by rf bias-assisted dc plasma-jet chemical vapor deposition. Effects of H2 flow rate and bias voltage on the growth of the cBN films were investigated. High phase purity cBN (over 90%) can be obtained in a wide range of H2 flow rates of 5–10 sccm and bias voltages from -50 to -100 V. Nearly phase pure cBN films were deposited at a H2 flow rate of 10 sccm...
Abstract. For the deposition of cubic boron nitride thin films in ArN2BF3H2 system by dc jet plasma chemical vapor deposition, the role of dc substrate bias ranging from -70V to -150V was investigated. A critical bias voltage was observed for the formation of cBN phase. The cBN content in the film increased with bias voltage and reached a maximum at the bias voltage of -85V. Increasing the bias voltage...
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