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In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
We report on fabrication of ultra-high-Q (∼106) whispering gallery microcavities on a fused silica chip using a femtosecond laser, enabled by the high spatial resolution and three-dimensional nature of femtosecond laser direct writing.
In this paper, we report the development of a novel Pt/MoO3 nano-flower/SiC Schottky diode based device for hydrogen gas sensing applications. The MoO3 nanostructured thin films were deposited on SiC substrates via thermal evaporation. Morphological characterization of the nanostructured MoO3 by scanning electron microscopy revealed randomly orientated thin nanoplatelets in a densely packed formation...
This paper presents for the first time (110) PMOS characteristics without Rext degradation, allowing investigation of fundamental mobility and demonstration of drive current Ion in excess of 1mA/mum at Ioff =100 nA/μm.
Preclean is a critical process step in Cu metallization to ensure device reliability. For the integration of ultra low k (kles2.5) dielectrics, an advanced preclean (APC) technology has been developed and characterized using PECVD SiOCH (k=2.5) dielectrics. With the optimal hardware and process, this technology minimizes plasma damage, causing no measurable k increase and having the lowest impact...
Beam sampling gratings (BSG) have been successfully fabricated to provide a small sample of the NIF 351nm high power laser beams. The sampled fraction will be used to determine the laser beam energy on target and to achieve power balance on all 192 NIF beams.
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