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In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0.5 source. The device shows good performance with an average subthreshold swing S of 80mV/dec over a drain current range of more than 3 orders of magnitude. We observed that an applied back-gate bias increases the on-current by a factor of 1.6, and improves the off-current...
A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C.
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