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Sol–gel derived Pb 40 Sr 60 TiO 3 (PST) thin film has been investigated as a diffusion barrier for integrating in PbZr 30 Ti 70 O 3 (PZT) device structures on Si substrates. PST film was deposited on SiO 2 /Si substrate and annealed at a relatively low temperature range of 550–600°C producing a crack-free, smooth and textured surface. Following...
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