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Electronic and optical properties of self-assembled InN/GaN quantum dots are investigated using a tight-binding model combined with full-configuration interaction calculations. Multi-exciton spectra are discussed. Dark exciton and biexciton ground-states are found for small quantum dots.
The role of polarons in the quantum kinetics of carrier-phonon interaction is emphasized. Scattering processes involving polarons allow ultrafast relaxation even if the phonon energy is not resonant with the electronic transitions.
The light emission of pillar microcavities with semiconductor quantum dots is studied within a theory-experiment comparison. Efficient mode confinement perpendicular to the emission direction leads to a series of transverse modes and enhanced QD emission
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