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Selection of optimized electron beam parameters for in-line monitoring is necessary to eliminate false signals. Application of electron beam to detect electrical defects, particularly leakages, for static random access memory (SRAM) cells poses a great challenge as it requires current measurement tool with nanometer resolution to complement it. By correlating the brightness intensity or the gray-level...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.