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Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability challenges in nano-scale technology. This paper presents an efficient technique to characterize and estimate the lifetime circuit reliability under NBTI degradation. Unlike conventional approaches, where a representative fMAX (maximum operating frequency) measurement from timing critical circuitry is used, we propose...
Super cut-off devices with sub-60mV/decade subthreshold swings have recently been demonstrated and being extensively studied. This paper presents a feasibility analysis of such tunneling devices for ultralow power subthreshold logic. Analysis shows that this device can deliver 800times higher performance (@iso-IOFF) compared to a MOSFET. The possible use of this device as a sleep transistor in conjunction...
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