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A complete extraction technique of SiGe HBTs is developed to extract the base and collector current noises and their correlation. Unlike conventional methods, a four-port noise de- embedding technique is used to remove the influence of extrinsic elements. From the extraction results, we found that the base current noise and collector current noise can not be modeled well using 2qIB and 2qlc, respectively...
SOI MOS technology has been slated as the future ULSI technology because of its advantages in terms of speed, isolation, density, yield and performance. The superior speed advantage of the SOI devices has attracted much attention in both digital and radio frequency applications. In recent years, a number of direct current analysis based on the body-tied configurations of SOI devices have been reported...
In this letter, the capacitance characteristics of RF LDMOS transistors with different temperatures and layout structures were studied. In a conventional fishbone structure, the peaks in capacitances decrease with increasing temperature. For the ring structure, two peaks in a capacitance-voltage curve have been observed at high drain voltages due to the additional corner effect. In addition, peaks...
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