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Interaction between 5 μm thick copper and 50 nm thin titanium films was investigated as a function of annealing temperature and time using MeV 4 He + Rutherford backscattering, X-ray diffraction and dynamic Secondary Ion Mass Spectrometry. Samples were made by depositing 10 nm of titanium on a PECVD silicon oxynitride, followed by 50 nm of titanium nitride and 50 nm of titanium in...
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