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A 3-stage wideband power amplifier (PA) using a 0.15 pm gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) process from NRC is designed, fabricated, and measured. After characterization of the high electron mobility transistor (HEMT), a non-linear model was created from the measured data for use in the design. The reactively matched 3.8 mm × 1.8 mm PA also uses resistive elements...
The potential application of polymer/ceramic capacitors at a higher frequency range is explored through a detailed characterization of several form factors of embedded capacitors. S-parameters of embedded decoupling capacitors using two different types of embedded capacitance material were measured from 500 MHz to 12 GHz. The effect of different geometries, electrode sizes, and materials are demonstrated...
A methodology for extracting an accurate, lumped element, equivalent circuit model for an interlayer via in a 3-D packaging scheme is presented. The model of a single via is extracted based upon the EM simulation of a test structure in which the via is landed at an internal capacitance layer within the multi-layer Liquid Crystal Polymer (LCP) or Printed Circuit Board (PCB) substrate. The objectives...
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