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An efficient semi-classical numerical modeling approach has been developed to simulate the coaxial Schottky-barrier carbon nanotube field-effect transistor (SB-CNTFET). In the modeling, the electrostatic potential of the CNT is obtained by self-consistently solving the analytic expression of CNT carrier distribution and the cylindrical Poisson equation, which significantly enhances the computational...
An efficient and universal numerical model of carbon nanotube (CN) field-effect transistor (FET) with nanowelding treatment has been developed. In this model, an analytic expression of carrier distribution of intrinsic CN is incorporated into the modified Poisson equation where a parameter η is adopted to account for the effect of ultrasonic nanowelding on the CN/metal contact. The electrostatic potential...
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