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Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films...
We fabricated the ferroelectric-gate field effect transistors (Fe-FETs) using a metal-ferroelectric-insulator-semiconductor (MFIS) structure as a gate configuration using (Bi,La)4Ti3O12 (BLT) and SrTa2O6 (STA) thin films. From the capacitance-voltage (C-V) measurements for MFIS capacitors, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.5 V for the...
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