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In this paper, we propose a subthreshold Static Random Access Memory (SRAM) circuit architecture with improved write ability. In subthreshold digital circuits, though the circuits can achieve ultra-low power dissipation, the performance is significantly degraded with threshold voltage variations due to the fabrication process and temperature. In particular, because the write operation of SRAM is prone...
This paper describes a switching-voltage detector and compensation circuits for an ultra-low-voltage CMOS inverter. The switching voltage of an inverter is an important design parameters for a digital circuit, and is determined by the difference in threshold voltages between MOSFETs. However, switching voltage varies significantly with fabrication process conditions and temperature. To address this...
In this paper, we propose delay-compensation techniques for subthreshold digital circuits. Delay in digital circuits that are operated in the subthreshold region of a MOSFET changes exponentially with variations in threshold voltage. To mitigate such variations, threshold-voltage monitoring and supply-voltage scaling techniques are adopted. By monitoring the threshold voltage of each LSI chip and...
An on-chip process, supply voltage, and temperature (PVT) compensation technique for a low-voltage CMOS digital circuit is proposed. Because the degradation of circuit performance originates from the variation of the saturation current, a compensation technique that uses a reference current that is independent of PVT variations was developed. The operations of the circuit were confirmed by SPICE simulation...
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