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We show that the linearity of a silicon electro-optic modulator can be improved by optimizing the embedded diode structure. Optimized designs of silicon modulators can give 5.9 dB improvement in SFDR over conventional LiNbO3 modulators.
We demonstrate optical up-conversion with frequency quadrupling using an optical phase modulator and a flat-top silicon microresonator filter by beating two second order sidebands at photodetector. 14 GHz signal was achieved using 3.5 GHz RF components.
We consider theoretically the linearity of silicon modulators. The reversed-biased modulation of hole concentration in silicon modulators can give 4.6dB improvement in Spurious Free Dynamic Range over conventional (linear electro-optic effect) III-V or LiNbO3 modulators.
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