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In this study, we present recent low frequency noise results obtained on Si/SiGeC Heterojunction Bipolar Transistors (HBTs) associated with a 0.13μm BiCMOS technology. Two technologies are studied, referenced as A and B, with high frequency figures of merit fT/fMAX (unity current gain frequency/maximum oscillation frequency) 220/280 GHz for technology A and 300/400 GHz for technology B. The LF Noise...
This work describes an UWB impulse transmitter with integrated antenna in the 60 GHz band implemented in CMOS65nm SOI technology. The transmitter aims low-power short-range high data-rate communication systems for fast-downloading applications. It consists of an oscillator that is switched on-and-off by the digital data to be transmitted and a medium power amplifier. The transmitter is fabricated...
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