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Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations...
Array of field-effect transistors (FET) with asymmetric T-gates and floating electrodes fabricated on a single chip was used as terahertz (THz) detector. Nonresonant detection with strong photovoltaic response was realized due to excitation of electron plasma oscillations in the common channel of the FETs array. Voltage responsivities obtained by the array of FETs with floating electrodes surpass...
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