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RF-MEMS represent a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch respect to ldquosolid staterdquo technologies. In this paper we demonstrate the possibility to fully integrate the process fabrication of RF-MEMS switches in the GaN-HEMT manufacturing steps to develop a RF-MEMS/MMIC prototype. MEMS RF performance reveals an insertion...
In this article the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in GaN technology are presented. Said switches have demonstrated state-of-the-art performance and RF fabrication yields better than 65%. In particular the X-band switch exhibits an on-state power handling capability of better than 37 dBm at the 1 dB insertion loss compression point and the...
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