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We present an InP-based membrane p-i-n photodetector on a silicon-on-insulator sample containing a Si-wiring photonic circuit that is suitable for use in optical interconnections on Si integrated circuits (ICs). The detector mesa footprint is 50 μm2, which is the smallest reported to date for this kind of device, and the junction capacitance is below 10 fF, which allows for high integration density...
We present the heterogeneous integration of III-V active opto-electronic devices on top of a silicon-on-insulator photonic integrated circuit. This is achieved by adhesive die-to-wafer bonding of an unprocessed InP/InGaAsP epitaxial layer structure, after which laser diodes and photodetectors were fabricated in the bonded layer and optically coupled to the underlying silicon-on-insulator waveguide...
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