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We demonstrate scale-dependent near-field photoluminescence of InAs quantum dots. Our analysis, based on eigen-decomposition, leads to a novel non-pixelated memory architecture thanks to spectral diversity obtained at an optimal scale of optical near-fields.
Two sizes of ZnO quantum dots with resonant energy levels were mixed to confirm the energy transfer and resultant energy conversion using time-resolved photoluminescence spectroscopy. The energy transfer time was found to be 130 ps.
We demonstrated nanophotonic gate operation of coupled InAs quantum dots using the pump-and-probe micro-photoluminescence measurement. The result indicates that we can select either AND- or NOT-gate operation by controlling the pulse intensity.
We observed the dark states of coupled InAs quantum dots via an optical near-field. The experimental results show that the dipoles of near-field coupled InAs quantum dots are distributed with an anti-parallel configuration.
GaN dots on AlN layers were grown on sapphire substrates by rf-nitrogen plasma molecular beam epitaxy. Size control of QDs by strain modification using various growth techniques is demonstrated to achieve emission energies ranging from 2.5 eV to 3.9 eV . In self-organized GaN QDs, the quantum confinement effect observed in the "classical" GaAs-based QD or QW, is offset by the large piezoelectric...
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