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The high-speed and static characteristics at high optical intensity of an InGaAsP/InGaAsP MQW electroabsorption modulator at 1.53 mu m are investigated. When considering wavelength and device length, and allowing a bandwidth in excess of 20 GHz and 2 V drive voltage, the authors found that the static and large-signal dynamic performances do not change with 5.6 dBm of coupled optical power. This is...
Efficient electroabsorption in an InGaAsP/InGaAsP MQW optical waveguide modulator structure is reported. A 17 dB extinction ratio is obtained by applying a 3.5 V drive voltage to a 78 mu m long waveguide operating at 1.54 mu m under TE-polarisation mode. The on-state attenuation is only 2 dB.<<ETX>>
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