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Hot-carrier effects of an n-channel LDD (lightly doped drain) MOSFET with Si/sub 3/N/sub 4//SiO/sub 2/ sidewall were investigated. As the oxide thickness under the nitride film spacer becomes thin, the initial degradation of the drain current becomes large, whereas its stress-time dependence becomes small. Moreover, relaxation of the drain current degradation in MOSFETs with only Si/sub 3/N/sub 4/...
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