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In this work, the gate degradation of GaN-based HEMTs is analyzed. We find that the gate degradation does not occur only beyond a critical voltage, but it has a strong voltage accelerated kinetics and a weak temperature dependence. By means of a statistical study we show that the time-to-failure can be fitted best with a Weibull distribution. By using the distribution parameters and a power law model...
We describe the fabrication and characteristics of high voltage enhancement mode SiN/AlGaN/GaN/AlGaN double heterostructure FET devices. The Si3N4 not only acts as a passivation layer but is crucial in the device concept as it acts as an electron donating layer (1). By selective removal under the gate of the in-situ SiN, we realize e-mode operation with a very narrow threshold voltage distribution...
GaN based devices offer many perspectives for power conversion applications. To demonstrate the capabilities of III-nitride components, we studied the switching behavior of a GaN DHFET device. We show that the combination of a low input capacitance, a low on-resistance and a high breakdown voltage is the key advantage for GaN components. Moreover the possibility to grow GaN on Si substrates allows...
A double barrier resonant tunneling heterostructure has been combined with a pseudomorphic high electron mobility transistor. This three terminal device shows negative transconductance in addition to a clear negative differential resistance region which shifts with gate voltage. The device characteristics can be adequately explained by a simple device simulation model. Flip-flop and frequency doubling...
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