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A Flexible and Transparent charge trap Memory (FTM) based on a single-layer graphene (SLG) channel with a ITO gate electrode was fabricated on a flexible and transparent poly-ethylene naphtalate (PEN) substrate. Triple high-k dielectric stacks Al2O3- AlOx-Al2O3 (AAA) were used as a data storage layer. The FTM shows memory characteristics with a memory window larger than 7V while maintaining ~80% of...
A The non-volatile gEOTMs are fabricated using a single-layer graphene (SLG) channel with an Al2O3 gate oxide layer, in which an ion-bombarded AlOx layer is intentionally formed by oxygen ion bombardment (OIB) to create the charge trap sites. The whole processes are carried out at temperature below 120°C to exploit gEOTM's compatibility to the flexible substrates. The devices shows a large memory...
A non-volatile memory (NVM) exploiting single-layer graphene (SLG) as a channel material has been fabricated through low temperature processes below 250°C and characterized for the first time. The injection of electrons into the trap sites of a triple high-k dielectrics stack results in a memory window of more than 9.0V. The NVGMs fabricated by processes compatible with flat panel display (FPD) can...
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