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In this paper, a novel device/circuit co-design scheme, namely Dynamic-Adjusting Threshold-Voltage Scheme (DATS) for independent-gate mode FinFET circuits has been proposed. The main idea of this scheme is that a pair of back-gate bias of FinFETs is adjusted dynamically to change threshold voltage according to the system operating frequency and operating mode, which could optimize circuit power, especially...
An extended gate ion sensitive field effect transistor with signal interface was presented for continuous monitoring of H+-ion concentrations. The SnO2/ITO glass, fabricated by sputtering SnO2 on the conductive ITO glass, was used as a pHsensitive membrane of extended gate field effect transistor (EGFET). The signal processing circuits, constructed by using differential sensing and noise shaping techniques,...
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