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Integration of high permittivity dielectrics or commonly named high-k dielectrics is widely investigated as a way to reduce passive component size in the chip. The complex permittivity microwave characterisation of medium-k materials such as HfO2 and high-k materials such as SrTiO3 is presented. The characterisation method, using coplanar, microstrip waveguides or metal-insulator-metal (MIM) capacitor,...
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