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Phase change RAM (PCRAM) is one of the best candidates for the next-generation nonvolatile memory. Recently lateral PCRAM using a thin phase change bridge was proposed as a promising approach to achieve high density due to simpler fabrication process and lower RESET current. This paper proposes a new lateral PCRAM structure - edge contact lateral structure, together with a Sb7Te3-GeTe super-lattice-like...
In this paper, phase change random access memory (PCRAM) cells at the nano-scale was studied. A hybrid patterning process integrating with electron beam lithography (EBL) and optical lithography was used to fabricate nano-PCRAM cell. PCRAM cells with different feature sizes ranging from 40 nm to 200 nm have been fabricated and tested by an in-house developed tester which was capable of generation...
Understanding of the phase change in nano-scale, or so-called nano-phase change, and its related issues are important for its applications on both optical recording and phase change random access memory (PCRAM). Nano-phase change can be classified into thickness-dependent and structure dependent types. For PCRAM device performance, the film thickness-dependent thermal profile and materials' properties...
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