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Giant spin–orbit torque (SOT) from topological insulators (TIs) has great potential for low‐power SOT‐driven magnetic random‐access memory (SOT‐MRAM). In this work, a functional 3‐terminal SOT‐MRAM device is demonstrated by integrating the TI [(BiSb)2Te3] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. An ultralow...
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