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The Pulsed Laser Deposition (PLD) technique has several advantages such as the possibility to produce thin films of any compound with a stoichiometric material transfer from the target to the substrate. Also the high energy of the ablated material is a benefit, leading to crystalline film growth due to the high mobility of the atoms on the substrate surface. In combination with a recently demonstrated...
Femtosecond lasers are widely used for three-dimensional volume micro-structuring of dielectric materials. The fabrication of buried channel waveguides inside these materials is interesting especially for the production of passive and active optical devices. The advantages of dielectric waveguide lasers are high optical gain, high damage threshold, and a good overlap between pump mode and laser mode...
In-band pumping at 0.88 mum was used to realize Nd-vanadate thin-disk lasers with maximum continuous-wave output power of 14.9 W at 1.06 mum, and to generate 9.1 W output power of green light at 0.53 mum. Results on deep-blue generation are discussed.
Epitaxially grown Nd(0.5%):(Gd, Lu)2O3 and Er(0.6%):(Gd, Lu)2O3 waveguides deposited on Y2O3 by pulsed laser deposition, providing peak emission cross sections comparable with those of Lu2O3 bulk crystals, have been fabricated and structured. Rib waveguiding has been shown.
In this work we report simultaneous emission on the 0.9-mum 4F3/2 → 4I9/2 and the 1.06-μm 4F3/2 → 4I11/2 transitions in Nd-based laser materials employing the thin-disk geometry in a multi-pass pump scheme, as well as a new design of the optical resonator.
High-power visible laser sources were realized by using Nd-based media in thin-disk geometry. The optical pumping was performed with diode lasers at 0.81 mum. To the best of our knowledge, for the first time pumping at 0.88 mum into the 4F3/2 level was also employed for Nd-vanadates for such a scheme. Improved performance are expected by optimizing various parameters of the laser configuration and,...
We report on continuous-wave 532-nm Nd:YVO4 thin-disk lasers with output powers of 6.4 W and 4.4 W with pumping at 808 nm and 880 nm, respectively. Also, deep-blue emission in the watt regime was achieved from Nd-doped vanadates.
Summary form only given. We demonstrate a Nd:LaSc/sub 3/(BO/sub 3/)/sub 4/ (Nd:LSB) microchip laser passively Q-switched by an antiresonant Fabry-Perot saturable absorber (A-FPSA) and have achieved the shortest reported pulses from a passively Q-switched solid-state laser.
Summary form only given. Nd:LaSc/sub 3/(BO/sub 3/)/sub 4/ (Nd:LSB) microchip crystals in combination with KTP as a frequency doubler are efficient diode-pumped frequency-doubled lasers. We present the results of first experiments with Nd:LSB and KTP crystals where all optical elements (directly coated gain media, intracavity frequency doubler, and Cr/sup 4+/:YAG acting as a passive Q-switch) are in...
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