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The determination of emission cross sections requires an emission spectrum and the radiative lifetime. In highly ion-doped materials reabsorption can significantly affect these parameters. The pinhole method is a measurement technique providing reabsorption-free spectroscopic parameters.
Epitaxially grown Nd(0.5%):(Gd, Lu)2O3 and Er(0.6%):(Gd, Lu)2O3 waveguides deposited on Y2O3 by Pulsed Laser Deposition, providing peak emission cross sections comparable with those of Lu2O3 bulk crystals, have been fabricated and structured. Rib waveguiding has been shown.
The fluorescence lifetimes of the 2F5/2 level of Yb3+ in LaSc3(BO3)4, Li6Y(BO3)3, Ca4YO(BO3)3, Ca4GdO(BO3)3, and YVO4 were determined for various doping concentrations applying the pinhole method.
We present an efficient in-band-pumped Er(0.2 at.%):Sc2O3-laser at 1581 nm with a maximum output power of 0.95 W and a maximum slope efficiency of 31%.
Epitaxially grown Nd(0.5%):(Gd, Lu)2O3 and Er(0.6%):(Gd, Lu)2O3 waveguides deposited on Y2O3 by pulsed laser deposition, providing peak emission cross sections comparable with those of Lu2O3 bulk crystals, have been fabricated and structured. Rib waveguiding has been shown.
A comparative study of highly-efficient laser operation of high-purity Yb:Lu2O3 and Yb:Sc2O3 is reported. In thin-disk laser geometry an output-power of 36.3 W at 1034 nm with a slope-efficiency of 80% was obtained from a 5at.%-doped Lu2O3-disk.
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