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A highly integrated SiGe BiCMOS PA is presented that enables the emerging high throughput 802.11ac WLAN applications. The PA has two stages for the g-band and three stages for the a-band PA, and integrates matching circuitry, out of band rejection filters, power detectors, and bias controls in a 1.5 ×1.6 mm chip. The g-band PA achieves 28 dB gain with 2% EVM at 18 dBm and 3% at 19.5 dBm output power...
An innovative Silicon-On-Insulator (SOI) SP4T T/R switch is presented. The SP4T switch consists of 2 receive paths with an integrated dual-band LNA and bypass attenuators along with 2 high linearity matched transmit paths. Tx paths feature 0.1 dB compression to 34 dBm input power and 0.5-0.8 dB insertion loss from 1 to 6 GHz with > 20 dB return loss and > 25 dB isolation. Receive paths feature...
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