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Strontium-bismuth-tantalate (SBT) is a new kind of dielectric layer material for use in semiconductor devices. The optical layer parameters of SBT were characterized by spectroscopic ellipsometry using the well-known Cauchy model as well as the Adachi model (Phys. Rev. B 35 (1987) 7454-7463). A comparison of both models was performed. Furthermore, these optical data were compared with the physical...
The in situ measurement of the crystallization of amorphous silicon at 600°C was carried out during the annealing of amorphous silicon-on-oxide samples inside a vertical furnace using spectroscopic ellipsometry. The ellipsometer arrangement was adapted to the furnace geometry using a special beam-guiding system to have a minimum impact on the furnace process performance. Modifications in the furnace...
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